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Photodiodes & Photo transistor
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| Silicon Photodiodes |
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These Si PIN photodiodes consist of 2 or 4 elements having sensitivity in near IR range and are packed stem can without lens.
Ask us directly for the details.
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The data sheet of each model is available with PDF file.
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Model No.
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Package
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Active Area
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Peak-wavelength
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Ceramic
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1.93mm2
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Typ. 560nm
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Ceramic
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5.92mm2
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Typ. 870nm
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Ceramic
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5.92mm2
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Typ. 560nm
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Ceramic
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1.27mm2
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Typ. 560nm
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Model No.
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Package
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Angular response
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Peak-wavelength
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Stem Can
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±12°
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Typ. 850nm
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SMD
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---
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Typ. 880nm
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Ta = 25℃
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Model No.
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Chip size (mm)
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Isc (µA)
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Id (pA)
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Conditions
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PD-11
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1.2 x 1.8
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1.0
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5.0
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VR=1V
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PD-21
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1.35 x 2.05
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1.5
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10.0
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VR=1V
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PD-71
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2.45 x 2.7
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3.0
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20.0
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VR=1V
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PD-7B
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2.7 x 3.1
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3.5
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30.0
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VR=1V
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* The other size and the custom-made photo diode chips would be available.
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| Photo transistor |
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The data sheet of each model is available with PDF file.
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Model No.
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Package
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Active Area
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Peak-wavelength
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Ceramic
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0.37mm2
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Typ. 800nm
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| Custom-Made & Assembly |
In addition to the standard products, Alpha-One can design and supply the custom-made one.
We also arrange the assembly of optoelectronics devices.
Please contact with us by advising your detailed requirements.
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